IPS80R2K4P7AKMA1

Производитель :

Rochester Electronics

категория продукта :

Транзисторы - FET, MOSFET - Single

Current - Continuous Drain (Id) @ 25°C :

2.5A (Tc)

Drain to Source Voltage (Vdss) :

800 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

7.5 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

150 pF @ 500 V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Part Status :

Active

Power Dissipation (Max) :

22W (Tc)

Rds On (Max) @ Id, Vgs :

2.4Ohm @ 800mA, 10V

Supplier Device Package :

PG-TO251-3

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3.5V @ 40µA