MTD5P06VT4

Производитель :

onsemi

категория продукта :

Транзисторы - FET, MOSFET - Single

Current - Continuous Drain (Id) @ 25°C :

5A (Tc)

Drain to Source Voltage (Vdss) :

60 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

20 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

510 pF @ 25 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Part Status :

Obsolete

Power Dissipation (Max) :

2.1W (Ta), 40W (Tc)

Rds On (Max) @ Id, Vgs :

450mOhm @ 2.5A, 10V

Supplier Device Package :

DPAK

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±15V

Vgs(th) (Max) @ Id :

4V @ 250µA