TPC8033-H(TE12LQM)

Производитель :

Toshiba Electronic Devices and Storage Corporation

категория продукта :

Транзисторы - FET, MOSFET - Single

Current - Continuous Drain (Id) @ 25°C :

17A (Ta)

Drain to Source Voltage (Vdss) :

30 V

Drive Voltage (Max Rds On, Min Rds On) :

-

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

42 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

3713 pF @ 10 V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Part Status :

Obsolete

Power Dissipation (Max) :

-

Rds On (Max) @ Id, Vgs :

5.3mOhm @ 8.5A, 10V

Supplier Device Package :

8-SOP (5.5x6.0)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

-

Vgs(th) (Max) @ Id :

2.5V @ 1mA