PMT200EN,115

Производитель :

NXP Semiconductors

категория продукта :

Транзисторы - FET, MOSFET - Single

Current - Continuous Drain (Id) @ 25°C :

1.8A (Ta)

Drain to Source Voltage (Vdss) :

100 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

10 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

475 pF @ 80 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-261-4, TO-261AA

Part Status :

Obsolete

Power Dissipation (Max) :

800mW (Ta), 8.3W (Tc)

Rds On (Max) @ Id, Vgs :

235mOhm @ 1.5A, 10V

Supplier Device Package :

SC-73

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.5V @ 250µA