PHM21NQ15T,518

Производитель :

NXP Semiconductors

категория продукта :

Транзисторы - FET, MOSFET - Single

Current - Continuous Drain (Id) @ 25°C :

22.2A (Tc)

Drain to Source Voltage (Vdss) :

150 V

Drive Voltage (Max Rds On, Min Rds On) :

5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

36.2 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

2080 pF @ 25 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-VDFN Exposed Pad

Part Status :

Obsolete

Power Dissipation (Max) :

62.5W (Tc)

Rds On (Max) @ Id, Vgs :

55mOhm @ 15A, 10V

Supplier Device Package :

8-HVSON (5x6)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 1mA