NSS60101DMTTBG

Hersteller :

onsemi

Produktkategorie :

Transistoren - Bipolar (BJT) - Arrays

Current - Collector (Ic) (Max) :

1A

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 500mA, 2V

Frequency - Transition :

180MHz

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

6-WDFN Exposed Pad

Part Status :

Active

Power - Max :

2.27W

Supplier Device Package :

6-WDFN (2x2)

Transistor Type :

2 NPN (Dual)

Vce Saturation (Max) @ Ib, Ic :

180mV @ 100mA, 1A

Voltage - Collector Emitter Breakdown (Max) :

60V