NSBA114TDXV6T5G

Hersteller :

onsemi

Produktkategorie :

Transistoren - Bipolar (BJT) - Arrays, vorgespannt

Current - Collector (Ic) (Max) :

100mA

Current - Collector Cutoff (Max) :

500nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

160 @ 5mA, 10V

Frequency - Transition :

-

Mounting Type :

Surface Mount

Package / Case :

SOT-563, SOT-666

Part Status :

Active

Power - Max :

500mW

Resistor - Base (R1) :

10kOhms

Resistor - Emitter Base (R2) :

-

Supplier Device Package :

SOT-563

Transistor Type :

2 PNP - Pre-Biased (Dual)

Vce Saturation (Max) @ Ib, Ic :

250mV @ 1mA, 10mA

Voltage - Collector Emitter Breakdown (Max) :

50V