NSBA114TF3T5G

Hersteller :

onsemi

Produktkategorie :

Transistoren - Bipolar (BJT) - Single, Pre-Biased

Current - Collector (Ic) (Max) :

100 mA

Current - Collector Cutoff (Max) :

500nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

160 @ 5mA, 10V

Frequency - Transition :

-

Mounting Type :

Surface Mount

Package / Case :

SOT-1123

Part Status :

Active

Power - Max :

254 mW

Resistor - Base (R1) :

10 kOhms

Resistor - Emitter Base (R2) :

-

Supplier Device Package :

SOT-1123

Transistor Type :

PNP - Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300µA, 10mA

Voltage - Collector Emitter Breakdown (Max) :

50 V