HN1B04F(TE85L,F)

Herst.Teilenummer
HN1B04F(TE85L,F)
Hersteller
Toshiba Electronic Devices and Storage Corporation
Paket/Fall
-
Datenblatt
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Beschreibung
TRANS NPN/PNP 30V 0.5A SM6
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Hersteller :
Toshiba Electronic Devices and Storage Corporation
Produktkategorie :
Transistoren - Bipolar (BJT) - Arrays
Current - Collector (Ic) (Max) :
500mA
Current - Collector Cutoff (Max) :
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce :
70 @ 100mA, 1V
Frequency - Transition :
200MHz
Mounting Type :
Surface Mount
Operating Temperature :
150°C (TJ)
Package / Case :
SC-74, SOT-457
Part Status :
Obsolete
Power - Max :
300mW
Supplier Device Package :
SM6
Transistor Type :
NPN, PNP
Vce Saturation (Max) @ Ib, Ic :
250mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max) :
30V
Datenblätter
HN1B04F(TE85L,F)

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