MBR200200CTR

Fabricant :

GeneSiC Semiconductor

catégorie de produit :

Diodes - Redresseurs - Matrices

Current - Average Rectified (Io) (per Diode) :

100A

Current - Reverse Leakage @ Vr :

3 mA @ 200 V

Diode Configuration :

1 Pair Common Anode

Diode Type :

Schottky

Mounting Type :

Chassis Mount

Operating Temperature - Junction :

-55°C ~ 150°C

Package / Case :

Twin Tower

Part Status :

Active

Reverse Recovery Time (trr) :

-

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Supplier Device Package :

Twin Tower

Voltage - DC Reverse (Vr) (Max) :

200 V

Voltage - Forward (Vf) (Max) @ If :

920 mV @ 100 A