MBR60030CTRL

N° de pièce du fabricant
MBR60030CTRL
Fabricant
GeneSiC Semiconductor
Paquet/Cas
-
Fiche de données
Télécharger
La description
DIODE SCHOTTKY 30V 300A 2 TOWER
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Fabricant :
GeneSiC Semiconductor
catégorie de produit :
Diodes - Redresseurs - Matrices
Current - Average Rectified (Io) (per Diode) :
300A
Current - Reverse Leakage @ Vr :
3 mA @ 30 V
Diode Configuration :
1 Pair Common Anode
Diode Type :
Schottky
Mounting Type :
Chassis Mount
Operating Temperature - Junction :
-55°C ~ 150°C
Package / Case :
Twin Tower
Part Status :
Obsolete
Reverse Recovery Time (trr) :
-
Speed :
Fast Recovery =< 500ns, > 200mA (Io)
Supplier Device Package :
Twin Tower
Voltage - DC Reverse (Vr) (Max) :
30 V
Voltage - Forward (Vf) (Max) @ If :
580 mV @ 300 A
Feuilles de données
MBR60030CTRL

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