HN1B04FE-Y,LXHF
- N° de pièce du fabricant
- HN1B04FE-Y,LXHF
- Paquet/Cas
- -
- Fiche de données
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- La description
- AUTO AEC-Q PNP + NPN TR VCEO:-50
* Quantité
Demander un devis (RFQ)
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- Fabricant :
- Toshiba Electronic Devices and Storage Corporation
- catégorie de produit :
- Transistors - Bipolaires (BJT) - Matrices
- Current - Collector (Ic) (Max) :
- 150mA
- Current - Collector Cutoff (Max) :
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 2mA, 6V
- Frequency - Transition :
- 80MHz
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 150°C (TJ)
- Package / Case :
- SOT-563, SOT-666
- Part Status :
- Active
- Power - Max :
- 100mW
- Supplier Device Package :
- ES6
- Transistor Type :
- NPN, PNP
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA, 300mV @ 10mA, 100mA
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Feuilles de données
- HN1B04FE-Y,LXHF
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Produits liés au catalogue
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