EMB11T2R
- N° de pièce du fabricant
- EMB11T2R
- Fabricant
- ROHM Semiconductor
- Paquet/Cas
- -
- Fiche de données
- Télécharger
- La description
- TRANS 2PNP PREBIAS 0.15W EMT6
* Quantité
Demander un devis (RFQ)
- * Nom du contact:
- * Compagnie:
- * E-mail:
- * Téléphoner:
- * Commentaire:
- * Captcha:
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- Fabricant :
- ROHM Semiconductor
- catégorie de produit :
- Transistors - Bipolaires (BJT) - Réseaux, pré-polarisés
- Current - Collector (Ic) (Max) :
- 100mA
- Current - Collector Cutoff (Max) :
- 500nA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 5mA, 5V
- Frequency - Transition :
- 250MHz
- Mounting Type :
- Surface Mount
- Package / Case :
- SOT-563, SOT-666
- Part Status :
- Active
- Power - Max :
- 150mW
- Resistor - Base (R1) :
- 10kOhms
- Resistor - Emitter Base (R2) :
- 10kOhms
- Supplier Device Package :
- EMT6
- Transistor Type :
- 2 PNP - Pre-Biased (Dual)
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 500µA, 10mA
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Feuilles de données
- EMB11T2R
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Produits liés au catalogue
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