MSD602-RT1G

Fabricant :

onsemi

catégorie de produit :

Transistors - Bipolaire (BJT) - Simple

Current - Collector (Ic) (Max) :

500 mA

Current - Collector Cutoff (Max) :

100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 150mA, 10V

Frequency - Transition :

-

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Part Status :

Active

Power - Max :

200 mW

Supplier Device Package :

SC-59

Transistor Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

600mV @ 30mA, 300mA

Voltage - Collector Emitter Breakdown (Max) :

50 V