TSM033NB04CR RLG

Fabricant :

Taiwan Semiconductor

catégorie de produit :

Transistors - FET, MOSFET - Unique

Current - Continuous Drain (Id) @ 25°C :

21A (Ta), 121A (Tc)

Drain to Source Voltage (Vdss) :

40 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

77 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

5022 pF @ 20 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

8-PowerTDFN

Part Status :

Active

Power Dissipation (Max) :

3.1W (Ta), 107W (Tc)

Rds On (Max) @ Id, Vgs :

3.3mOhm @ 21A, 10V

Supplier Device Package :

8-PDFN (5x6)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 250µA