R6047ENZ1C9

Fabricant :

ROHM Semiconductor

catégorie de produit :

Transistors - FET, MOSFET - Unique

Current - Continuous Drain (Id) @ 25°C :

47A (Tc)

Drain to Source Voltage (Vdss) :

600 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

145 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

3850 pF @ 25 V

Mounting Type :

Through Hole

Operating Temperature :

150°C (TJ)

Package / Case :

TO-247-3

Part Status :

Obsolete

Power Dissipation (Max) :

120W (Tc)

Rds On (Max) @ Id, Vgs :

72mOhm @ 25.8A, 10V

Supplier Device Package :

TO-247

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 1mA