NP100P06PDG-E1-AY

Fabricant :

Renesas Electronics Corporation

catégorie de produit :

Transistors - FET, MOSFET - Unique

Current - Continuous Drain (Id) @ 25°C :

100A (Tc)

Drain to Source Voltage (Vdss) :

60 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

300 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

15000 pF @ 10 V

Mounting Type :

Surface Mount

Operating Temperature :

175°C (TJ)

Package / Case :

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Part Status :

Active

Power Dissipation (Max) :

1.8W (Ta), 200W (Tc)

Rds On (Max) @ Id, Vgs :

6mOhm @ 50A, 10V

Supplier Device Package :

TO-263

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.5V @ 1mA