FQNL2N50BBU

Fabricant :

Rochester Electronics

catégorie de produit :

Transistors - FET, MOSFET - Unique

Current - Continuous Drain (Id) @ 25°C :

350mA (Tc)

Drain to Source Voltage (Vdss) :

500 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

8 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

230 pF @ 25 V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-226-3, TO-92-3 Long Body (Formed Leads)

Part Status :

Obsolete

Power Dissipation (Max) :

1.5W (Tc)

Rds On (Max) @ Id, Vgs :

5.3Ohm @ 175mA, 10V

Supplier Device Package :

TO-92-3

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

3.7V @ 250µA