IPS80R1K4P7AKMA1

Fabricant :

Rochester Electronics

catégorie de produit :

Transistors - FET, MOSFET - Unique

Current - Continuous Drain (Id) @ 25°C :

4A (Tc)

Drain to Source Voltage (Vdss) :

800 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

Super Junction

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

10 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

-

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-251-3 Stub Leads, IPak

Part Status :

Active

Power Dissipation (Max) :

32W (Tc)

Rds On (Max) @ Id, Vgs :

1.4Ohm @ 1.4A, 10V

Supplier Device Package :

PG-TO251-3-11

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3.5V @ 700µA