TK31J60W,S1VQ
- N° de pièce du fabricant
- TK31J60W,S1VQ
- Paquet/Cas
- -
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- La description
- MOSFET N-CH 600V 30.8A TO3P
* Quantité
Demander un devis (RFQ)
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- Fabricant :
- Toshiba Electronic Devices and Storage Corporation
- catégorie de produit :
- Transistors - FET, MOSFET - Unique
- Current - Continuous Drain (Id) @ 25°C :
- 30.8A (Ta)
- Drain to Source Voltage (Vdss) :
- 600 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- FET Feature :
- Super Junction
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 86 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 3000 pF @ 300 V
- Mounting Type :
- Through Hole
- Operating Temperature :
- 150°C (TJ)
- Package / Case :
- TO-3P-3, SC-65-3
- Part Status :
- Active
- Power Dissipation (Max) :
- 230W (Tc)
- Rds On (Max) @ Id, Vgs :
- 88mOhm @ 15.4A, 10V
- Supplier Device Package :
- TO-3P(N)
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±30V
- Vgs(th) (Max) @ Id :
- 3.7V @ 1.5mA
- Feuilles de données
- TK31J60W,S1VQ
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Produits liés au catalogue
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