IRFS17N20D

Fabricant :

Infineon Technologies

catégorie de produit :

Transistors - FET, MOSFET - Unique

Current - Continuous Drain (Id) @ 25°C :

16A (Tc)

Drain to Source Voltage (Vdss) :

200 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

50 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

1100 pF @ 25 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Part Status :

Obsolete

Power Dissipation (Max) :

3.8W (Ta), 140W (Tc)

Rds On (Max) @ Id, Vgs :

170mOhm @ 9.8A, 10V

Supplier Device Package :

D2PAK

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

5.5V @ 250µA