SSM4K27CTTPL3

Fabricant :

Toshiba Electronic Devices and Storage Corporation

catégorie de produit :

Transistors - FET, MOSFET - Unique

Current - Continuous Drain (Id) @ 25°C :

500mA (Ta)

Drain to Source Voltage (Vdss) :

20 V

Drive Voltage (Max Rds On, Min Rds On) :

1.8V, 4V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

-

Input Capacitance (Ciss) (Max) @ Vds :

174 pF @ 10 V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

4-SMD, No Lead

Part Status :

Obsolete

Power Dissipation (Max) :

400mW (Ta)

Rds On (Max) @ Id, Vgs :

205mOhm @ 250mA, 4V

Supplier Device Package :

CST4 (1.2x0.8)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±12V

Vgs(th) (Max) @ Id :

1.1V @ 1mA