TPCC8001-H(TE12LQM

Fabricant :

Toshiba Electronic Devices and Storage Corporation

catégorie de produit :

Transistors - FET, MOSFET - Unique

Current - Continuous Drain (Id) @ 25°C :

22A (Ta)

Drain to Source Voltage (Vdss) :

30 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

27 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

2500 pF @ 10 V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

8-VDFN Exposed Pad

Part Status :

Obsolete

Power Dissipation (Max) :

700mW (Ta), 30W (Tc)

Rds On (Max) @ Id, Vgs :

8.3mOhm @ 11A, 10V

Supplier Device Package :

8-TSON Advance (3.3x3.3)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.5V @ 1mA