NVMSD6N303R2G

Fabricant :

onsemi

catégorie de produit :

Transistors - FET, MOSFET - Unique

Current - Continuous Drain (Id) @ 25°C :

6A (Ta)

Drain to Source Voltage (Vdss) :

30 V

Drive Voltage (Max Rds On, Min Rds On) :

-

FET Feature :

Schottky Diode (Isolated)

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

30 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

950 pF @ 24 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Part Status :

Obsolete

Power Dissipation (Max) :

-

Rds On (Max) @ Id, Vgs :

32mOhm @ 6A, 10V

Supplier Device Package :

8-SOIC

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

-

Vgs(th) (Max) @ Id :

2.5V @ 250µA