PMV32UP/MIR

Fabricant :

Nexperia

catégorie de produit :

Transistors - FET, MOSFET - Unique

Current - Continuous Drain (Id) @ 25°C :

4A (Ta)

Drain to Source Voltage (Vdss) :

20 V

Drive Voltage (Max Rds On, Min Rds On) :

1.8V, 4.5V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

15.5 nC @ 4.5 V

Input Capacitance (Ciss) (Max) @ Vds :

1890 pF @ 10 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Part Status :

Obsolete

Power Dissipation (Max) :

510mW (Ta), 4.15W (Tc)

Rds On (Max) @ Id, Vgs :

36mOhm @ 2.4A, 4.5V

Supplier Device Package :

TO-236AB

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±8V

Vgs(th) (Max) @ Id :

950mV @ 250µA