HGTD1N120BNS9A

Fabricant :

onsemi

catégorie de produit :

Transistors - IGBT - Unique

Current - Collector (Ic) (Max) :

5.3 A

Current - Collector Pulsed (Icm) :

6 A

Gate Charge :

14 nC

IGBT Type :

NPT

Input Type :

Standard

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Part Status :

Active

Power - Max :

60 W

Reverse Recovery Time (trr) :

-

Supplier Device Package :

TO-252AA

Switching Energy :

70µJ (on), 90µJ (off)

Td (on/off) @ 25°C :

15ns/67ns

Test Condition :

960V, 1A, 82Ohm, 15V

Vce(on) (Max) @ Vge, Ic :

2.9V @ 15V, 1A

Voltage - Collector Emitter Breakdown (Max) :

1200 V