- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Arrays, Pre-Biased
- Current - Collector (Ic) (Max) :
- 100mA
- Current - Collector Cutoff (Max) :
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 5mA, 5V
- Frequency - Transition :
- 230MHz, 180MHz
- Mounting Type :
- Surface Mount
- Package / Case :
- 6-XFDFN Exposed Pad
- Part Status :
- Active
- Power - Max :
- 350mW
- Resistor - Base (R1) :
- 47kOhms
- Resistor - Emitter Base (R2) :
- 47kOhms
- Supplier Device Package :
- DFN1010B-6
- Transistor Type :
- 1 NPN, 1 PNP - Pre-Biased (Dual)
- Vce Saturation (Max) @ Ib, Ic :
- 150mV @ 500µA, 10mA
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Datasheets
- PQMD12Z
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