NDS9952A

Mfr.Part #
NDS9952A
Manufacturer
Rochester Electronics
Package/Case
-
Datasheet
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Description
POWER FIELD-EFFECT TRANSISTOR, 3
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Manufacturer :
Rochester Electronics
Product Category :
Transistors - FETs, MOSFETs - Arrays
Current - Continuous Drain (Id) @ 25°C :
3.7A, 2.9A
Drain to Source Voltage (Vdss) :
30V
FET Feature :
Logic Level Gate
FET Type :
N and P-Channel
Gate Charge (Qg) (Max) @ Vgs :
25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
320pF @ 10V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Part Status :
Active
Power - Max :
900mW
Rds On (Max) @ Id, Vgs :
80mOhm @ 1A, 10V
Supplier Device Package :
8-SOIC
Vgs(th) (Max) @ Id :
2.8V @ 250µA
Datasheets
NDS9952A

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