FQD19N10LTM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

15.6A (Tc)

Drain to Source Voltage (Vdss) :

100 V

Drive Voltage (Max Rds On, Min Rds On) :

5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

18 nC @ 5 V

Input Capacitance (Ciss) (Max) @ Vds :

870 pF @ 25 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Part Status :

Active

Power Dissipation (Max) :

2.5W (Ta), 50W (Tc)

Rds On (Max) @ Id, Vgs :

100mOhm @ 7.8A, 10V

Supplier Device Package :

TO-252AA

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2V @ 250µA