MWS5101AEL3

Производитель :

Rochester Electronics

категория продукта :

объем памяти

Access Time :

350 ns

Clock Frequency :

-

Memory Format :

SRAM

Memory Interface :

Parallel

Memory Size :

1Kb (256 x 4)

Memory Type :

Volatile

Mounting Type :

Through Hole

Operating Temperature :

0°C ~ 70°C (TA)

Part Status :

Active

Supplier Device Package :

22-PDIP

Technology :

SRAM - Asynchronous

Voltage - Supply :

4.5V ~ 5.5V

Write Cycle Time - Word, Page :

400ns