MWS5114D2

Производитель :

Rochester Electronics

категория продукта :

объем памяти

Access Time :

250 ns

Clock Frequency :

-

Memory Format :

SRAM

Memory Interface :

Parallel

Memory Size :

4Kb (1K x 4)

Memory Type :

Volatile

Mounting Type :

Through Hole

Operating Temperature :

0°C ~ 70°C (TA)

Part Status :

Active

Supplier Device Package :

18-SBDIP

Technology :

SRAM - Synchronous

Voltage - Supply :

4.5V ~ 6.5V

Write Cycle Time - Word, Page :

250ns