SI9933BDY

Производитель :

Rochester Electronics

категория продукта :

Транзисторы - FET, MOSFET - Массивы

Current - Continuous Drain (Id) @ 25°C :

3.4A (Ta)

Drain to Source Voltage (Vdss) :

20V

FET Feature :

-

FET Type :

2 P-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

825pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 175°C (TJ)

Part Status :

Active

Power - Max :

900mW (Ta)

Rds On (Max) @ Id, Vgs :

75mOhm @ 3.2A, 4.5V

Supplier Device Package :

8-SOIC

Vgs(th) (Max) @ Id :

1.5V @ 250µA