TK30A06N1,S4X

Fabricant :

Toshiba Electronic Devices and Storage Corporation

catégorie de produit :

Transistors - FET, MOSFET - Unique

Current - Continuous Drain (Id) @ 25°C :

30A (Tc)

Drain to Source Voltage (Vdss) :

60 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

16 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

1050 pF @ 30 V

Mounting Type :

Through Hole

Operating Temperature :

150°C (TJ)

Package / Case :

TO-220-3 Full Pack

Part Status :

Active

Power Dissipation (Max) :

25W (Tc)

Rds On (Max) @ Id, Vgs :

15mOhm @ 15A, 10V

Supplier Device Package :

TO-220SIS

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 200µA