TK30S06K3L(T6L1,NQ

Fabricant :

Toshiba Electronic Devices and Storage Corporation

catégorie de produit :

Transistors - FET, MOSFET - Unique

Current - Continuous Drain (Id) @ 25°C :

30A (Ta)

Drain to Source Voltage (Vdss) :

60 V

Drive Voltage (Max Rds On, Min Rds On) :

6V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

28 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

1350 pF @ 10 V

Mounting Type :

Surface Mount

Operating Temperature :

175°C (TJ)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Part Status :

Last Time Buy

Power Dissipation (Max) :

58W (Tc)

Rds On (Max) @ Id, Vgs :

18Ohm @ 15A, 10V

Supplier Device Package :

DPAK+

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3V @ 1mA